FDMA410NZT Description
This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe. This design is similar to the FDMA410NZ, however.
FDMA410NZT Key Features
- 0.55 mm max package height MicroFET 2 x 2 mm Package
- Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
- Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A
- Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A
- Max RDS(on) = 60 mW at VGS = 1.5 V, ID = 2.0 A
- HBM ESD protection level > 1.5 kV (Note 3)
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS