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FDMA410NZT Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.

This design is similar to the FDMA410NZ, however it

Overview

MOSFET – N-Channel, POWERTRENCH), Ultra Thin, 1.5 V 20 V, 9.

Key Features

  • our new advanced 0.55 mm max 2 x 2 MLP package technology. Features.
  • 0.55 mm max package height MicroFET 2 x 2 mm Package.
  • Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A.
  • Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A.
  • Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A.
  • Max RDS(on) = 60 mW at VGS = 1.5 V, ID = 2.0 A.
  • HBM ESD protection level > 1.5 kV (Note 3).
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Complian.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDMA410NZ Single N-channel MOSFET Fairchild Semiconductor

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