FDMA410NZ Datasheet and Specifications PDF

This Single N−Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe. Features • Max RDS(on) = 23 mW at VGS =.

* Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
* Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A
* Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A
* Max RDS(on) = 50 mW at VGS = 1.5 V, ID = 2.0 A
* HBM ESD Protection Level > 2.5 kV (Note 3)
* Low Profile
* 0.8 mm Maximum in the New Package MicroFET .

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Applications „ Li-lon.

* Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
* Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
* Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
* Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A
* HBM ESD protection level > 2.5 kV (Note 3)
* Low Profile-0.8 mm maximum in the new package MicroFET 2x.