FDMA410NZ Description
This Single N−Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.
FDMA410NZ Key Features
- Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
- Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A
- Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A
- Max RDS(on) = 50 mW at VGS = 1.5 V, ID = 2.0 A
- HBM ESD Protection Level > 2.5 kV (Note 3)
- Low Profile
- 0.8 mm Maximum in the New Package MicroFET
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb-Free, Halide Free and is RoHS pliant