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Fairchild Semiconductor Electronic Components Datasheet

FDMA507PZ Datasheet

Single P-Channel PowerTrench MOSFET

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May 2010
FDMA507PZ
Single P-Channel PowerTrench® MOSFET
-20 V, -7.8 A, 24 m
Features
General Description
„ Max rDS(on) = 24 mat VGS = -5 V, ID = -7.8 A
„ Max rDS(on) = 25 mat VGS = -4.5 V, ID = -7 A
„ Max rDS(on) = 35 mat VGS = -2.5 V, ID = -5.5 A
„ Max rDS(on) = 45 mat VGS = -1.8 V, ID = -4 A
„ Low Profile - 0.8 mm maximum - in the package MicroFET
2X2 mm
„ HBM ESD protection level > 3.2K V typical (Note3)
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-stade resistance.
The MicroFET 2X2 package offers exceptional thermal
perfomance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-7.8
-24
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
507
Device
FDMA507PZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMA507PZ Datasheet

Single P-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 µA, VGS = 0 V
-20
V
ID = -250 µA, referenced to 25 °C
-12 mVC
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 µA
-0.4 -0.5 -1.5
V
ID = -250 µA, referenced to 25 °C
3 mV/°C
VGS = -5 V, ID = -7.8 A
VGS = -4.5 V, ID = -7 A
VGS = -2.5 V, ID = -5.5 A
VGS = -1.8 V, ID = -4 A
VGS = -5 V, ID = -7.8 A, TJ = 125 °C
VDS = -5 V, ID = -7.8 A
19 24
20 25
24 35 m
29 45
26 34
33 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
1515
265
240
2015
355
360
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -7.8 A
VGS = -5 V, RGEN = 6
VDD = -10 V, ID = -7.8 A
VGS = -5 V
6.4 13
14 25
192 307
96 154
30 42
2
7.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -2.0 A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -7.8 A, di/dt = 100 A/µs
-0.6 -1.2
66 106
44 70
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
2
www.fairchildsemi.com


Part Number FDMA507PZ
Description Single P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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