FDMA507PZ Datasheet | Fairchild Semiconductor

FDMA507PZ Single P-Channel PowerTrench® MOSFET May 2010 Single P-Channel PowerTrench® MOSFET -20 V, -7.8 A, 24 mΩ Features - Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A - Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A - Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A - Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A - Low Profile - 0.8 mm maximum - in the package MicroFET 2X2 mm - HBM ESD protection level > 3.2K V typical (Note3) - Free from halogenated pounds and antimony oxides - RoHS pliant General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with...