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FDMA507PZ - Single P-Channel PowerTrench MOSFET

Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.

Features

  • Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A.
  • Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A.
  • Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A.
  • Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A.
  • Low Profile - 0.8 mm maximum - in the package MicroFET 2X2 mm.
  • HBM ESD protection level > 3.2K V typical (Note3).
  • Free from halogenated compounds and antimony oxides.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

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FDMA507PZ Single P-Channel PowerTrench® MOSFET May 2010 FDMA507PZ Single P-Channel PowerTrench® MOSFET -20 V, -7.8 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A „ Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A „ Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A „ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A „ Low Profile - 0.8 mm maximum - in the package MicroFET 2X2 mm „ HBM ESD protection level > 3.2K V typical (Note3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance.
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