Datasheet Details
| Part number | FDMA8878 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 212.78 KB |
| Description | Single N-Channel PowerTrench MOSFET |
| Download | FDMA8878 Download (PDF) |
|
|
| Part number | FDMA8878 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 212.78 KB |
| Description | Single N-Channel PowerTrench MOSFET |
| Download | FDMA8878 Download (PDF) |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
Application DC/DC Buck Converters Load Switch in NB Notebook Battery Power Management Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TC = 25 °C TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 10 9.0 40 2.4 0.9 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 878 Device FDMA8878 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev.C 1 www.fairchildsemi.com FDMA8878 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 24 V, VGS = 0 V 30 26 1 100 V mV/°C μA nA Gate to Source Leakage Current, Forward VGS = 20 V, VD
FDMA8878 Single N-Channel Power Trench® MOSFET May 2012 FDMA8878 Single N-Channel Power Trench® MOSFET 30 V, 9.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMA8878 | N-Channel MOSFET | ON Semiconductor |
|
FDMA8878-F130 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDMA8884 | Single N-Channel PowerTrench MOSFET |
| FDMA8051L | MOSFET |
| FDMA86108LZ | MOSFET |
| FDMA86151L | MOSFET |
| FDMA86251 | MOSFET |
| FDMA86265P | P-Channel MOSFET |
| FDMA86551L | MOSFET |
| FDMA0104 | N-Channel MOSFET |
| FDMA1023PZ | Dual P-Channel PowerTrench MOSFET |
| FDMA1024NZ | Dual N-Channel PowerTrench MOSFET |