FDMA8878 - Single N-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMA8878
Manufacturer	Fairchild Semiconductor
File Size	212.78 KB
Description	Single N-Channel PowerTrench MOSFET
Datasheet	FDMA8878-FairchildSemiconductor.pdf

FDMA8878 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. DC/DC Buck Converters Load Switch in NB Notebook Battery Power Management Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Vo

Features

Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A.
Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A.
High performance trench technology for extremely low rDS(on).
Fast switching speed.
RoHS Compliant General.

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Published: Oct 29, 2014 |