FDMA8884 Datasheet | Fairchild Semiconductor

FDMA8884 N-Channel Power Trench® MOSFET May 2014 Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features - Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A - Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A - High performance trench technology for extremely low rDS(on) - Fast switching speed - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Application - Primary Switch Pin 1 Bottom Drain Contact Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol...