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FDMA8884 Single N-Channel PowerTrench MOSFET

FDMA8884 Description

FDMA8884 N-Channel Power Trench® MOSFET May 2014 FDMA8884 Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching perform.

FDMA8884 Features

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology for extremely low rDS(on)
* Fast switching speed

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Datasheet Details

Part number
FDMA8884
Manufacturer
Fairchild Semiconductor
File Size
308.99 KB
Datasheet
FDMA8884-FairchildSemiconductor.pdf
Description
Single N-Channel PowerTrench MOSFET

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Single N-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDMA8884-like datasheet