Datasheet Details
| Part number | FDMA8884 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 308.99 KB |
| Description | Single N-Channel PowerTrench MOSFET |
| Download | FDMA8884 Download (PDF) |
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| Part number | FDMA8884 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 308.99 KB |
| Description | Single N-Channel PowerTrench MOSFET |
| Download | FDMA8884 Download (PDF) |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application Primary Switch Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 8.0 6.5 25 1.9 0.7 -55 to +150 W °C A Units V V Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 180 °C/W Package Marking and Ordering Information Device Marking 884 Device FDMA8884 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMA8884 Rev.C5 1 www.fairchildsemi.com FDMA8884 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 24 V, VGS = 0 V 30 15 1 100 V mV/°C μA nA Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V On Characteristics VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate t
FDMA8884 N-Channel Power Trench® MOSFET May 2014 FDMA8884 Single N-Channel Power Trench® MOSFET 30 V, 6.
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