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Fairchild Semiconductor Electronic Components Datasheet

FDMB3800N Datasheet

Dual N-Channel PowerTrench MOSFET

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January 2006
FDMB3800N
Dual N-Channel PowerTrench® MOSFET
4.8A, 30V, 40m
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
AD FREE I
Features
„ RDS(ON) = 40 m@ VGS = 10 V
RDS(ON) = 51 m@ VGS = 4.5 V
„ Fast switching speed
„ Low gate charge
„ High performance trench technology for extremely low
RDS(ON)
„ High power and current handling capability.
„ RoHS Compliant
GATE SOURCE
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5
6
7
8
Q1
4
3
Q2
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
PD
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
3800
Device
FDMB3800N
Reel Size
7inch
Tape Width
8mm
©2006 Fairchild Semiconductor Corporation
FDMB3800N Rev. C
1
Ratings
30
±20
4.8
9
1.6
0.75
-55 to +150
Units
V
V
A
W
°C
80
165 °C/W
Quantity
3000 units
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMB3800N Datasheet

Dual N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage,
VGS = 0V, ID = 250µA
ID = 250µA,
Referenced to 25°C
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V,
TJ = 55°C
VGS = ±20V, VDS = 0V
30 - - V
- 24 - mV/°C
- -1
- - 10 µA
- - ±100 nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250µA
ID = 250µA,
Referenced to 25°C
VGS = 10V, ID = 4.8A
VGS = 4.5V, ID = 4.3A
VGS = 10V, ID = 4.8A
TJ = 125°C
VGS = 10V, VDS = 5V
VDS = 5V, ID = 4.8A
1 1.9 3
V
- -4 - mV/°C
- 32 40
- 41 51 m
- 43 61
10 -
- 14
-
-
A
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1.0MHz
f=1.0MHz
-
350 465
pF
- 90 120 pF
- 40 60 pF
- 3-
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15V, ID = 1A
VGS = 10V, RGEN = 6
VDS = 15V, ID = 7.5A,
VGS = 5V
- 8 16 ns
- 5 10 ns
- 21 34 ns
- 2 10 ns
- 4 5.6 nC
- 1.0 - nC
- 1.5 - nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
- - 1.25 A
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS =1.25 A (Note 2) -
0.8 1.2
V
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF= 4.8A, dIF/dt=100A/µs
- - 22 ns
- - 9 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
a) 80°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 165°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1: 1 on letter size paper
FDMB3800N Rev. C
2 www.fairchildsemi.com


Part Number FDMB3800N
Description Dual N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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