FDMB3800N mosfet equivalent, dual n-channel powertrench mosfet.
* RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely l.
where low in-line power loss and fast switching are required.
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Features
* RDS(ON) = 40 mΩ @ VGS = 10 V.
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are wel.
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