FDMB3800N

The FDMB3800N is Dual N-Channel PowerTrench MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMB3800N
Manufacturer	Fairchild Semiconductor
File Size	355.54 KB
Description	Dual N-Channel PowerTrench MOSFET
Datasheet	FDMB3800N_FairchildSemiconductor.pdf
Additional preview pages of the FDMB3800N datasheet.

Product details

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
RoHS Compliant Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dis.

📁 Similar Datasheet

FDM-2B - FDM-2B (ETC)
FDM100-0045SP - Buck Chopper (IXYS Corporation)
FDM21-05QC - Power MOSFET (IXYS Corporation)
FDM3622 - N-Channel MOSFET (ON Semiconductor)
FDMA037N08LC - N-Channel MOSFET (ON Semiconductor)
FDMA1023PZ - Dual P-Channel MOSFET (ON Semiconductor)
FDMA1024NZ - Dual N-Channel MOSFET (ON Semiconductor)
FDMA1027P - Dual P-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDMB3900AN - Dual N-Channel MOSFET
FDMB2307NZ - Dual Common Drain N-Channel MOSFET
FDMB2308PZ - MOSFET
FDMB506P - P-Channel 1.8V Logic Level PowerTrench MOSFET
FDMB668P - P-Channel 1.8V Logic Level PowerTrench MOSFET
FDM2452NZ - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

Published: May 3, 2007 |