Datasheet Details
| Part number | FDMC4435BZ |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 433.42 KB |
| Description | MOSFET |
| Datasheet |
 FDMC4435BZ-FairchildSemiconductor.pdf
|
| Part number | FDMC4435BZ |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 433.42 KB |
| Description | MOSFET |
| Datasheet |
FDMC4435BZ-FairchildSemiconductor.pdf
|
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability HBM ESD protection level >7 kV typical (Note 4) 100% UIL Tested Termination is Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semico
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