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FDMC4435BZ - MOSFET

General Description

Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capabi

Key Features

  • General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ November 2015 Features General Description „ Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A „ Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A „ Extended VGSS range (-25 V) for battery applications „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ HBM ESD protection level >7 kV typical (Note 4) „ 100% UIL Tested „ Termination is Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.