FDMC510P
Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Key Features
- Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
- Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
- Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
- Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- Termination is Lead-free and RoHS compliant
- HBM ESD capability level >2 KV typical (Note
