Datasheet Details
| Part number | FDMC5614P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 531.32 KB |
| Description | P-Channel PowerTrench MOSFET |
| Datasheet |
 FDMC5614P Datasheet
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| Part number | FDMC5614P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 531.32 KB |
| Description | P-Channel PowerTrench MOSFET |
| Datasheet |
FDMC5614P Datasheet
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Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A Low gate charge Fast switching speed This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process.
It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).
High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS Compliant Application Power management Load switch Battery protection Top Bottom D5 Pin 1 S SG S D6 D7 DD D D D8 MLP 3.3x3.3 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Ratings -60 ±20 -13.5 -14 -5.7 -23 42 2.1 -55 to +150 Units V V A W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 3.0 (Note 1a) 60 °C/W Device Marking 5614P Device FDMC5614P Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation 1 FDMC5614P Rev.C2 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V -60 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current V
FDMC5614P P-Channel PowerTrench® MOSFET FDMC5614P P-Channel PowerTrench® MOSFET -60V, -13.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC5614P | P-Channel MOSFET | ON Semiconductor |
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FDMC5614P-L701 | P-Channel MOSFET | ON Semiconductor |
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