Datasheet Summary
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P P-Channel PowerTrench® MOSFET
-60V, -13.5A, 100mΩ
May 2014
Features
General Description
- Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A
- Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A
- Low gate charge
- Fast switching speed
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS pliant
Application
- Power management
- Load switch
- Battery...
