FDMC5614P datasheet, mosfet equivalent, Fairchild Semiconductor

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FDMC5614P Features and benefits

* Max rDS(on) = 100 mΩ @ VGS = -10 V,ID = -5.7A
* Max rDS(on) = 135 mΩ @ VGS = -4.5 V,ID = -4.4A
* Low gate charge
* Fast switching speed
* High perfo.

FDMC5614P Application

requiring a wide range of gate drive voltage ratings (4.5V-20V). Features
* Max rDS(on) = 100 mΩ @ VGS = -10 V,ID =.

FDMC5614P Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). Features
* Max rD.

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