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FDMC612PZ - MOSFET

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FDMC612PZ Product details

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Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A. Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A. High performance trench technology for extremely low rDS(on). High power and current handling capability in a widely used surface mount package. Termination is Lead-free and RoHS Compliant. HBM ESD capability level > 3.6 KV typical (Note 4) This P-Channel MO.

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