FDMC612PZ Description
Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Termination is Lead-free and RoHS pliant HBM ESD capability level > 3.6 KV typical (Note 4) This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced...
FDMC612PZ Key Features
- Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A
- Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Termination is Lead-free and RoHS pliant
- HBM ESD capability level > 3.6 KV typical (Note 4)