FDMC612PZ
Features
General Description
- Max r DS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A
- Max r DS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A
- High performance trench technology for extremely low r DS(on)
- High power and current handling capability in a widely used surface mount package
- Termination is Lead-free and Ro HS pliant
- HBM ESD capability level > 3.6 KV typical (Note 4)
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for r DS(ON), switching performance and ruggedness.
Applications
- Battery Management
- Load Switch
DD D D
Pin 1
1 234 Top
GS S S Bottom
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous...
