• Part: FDMC8360L
  • Description: N-Channel Shielded Gate Power Trench MOSFET
  • Manufacturer: Fairchild Semiconductor
  • Size: 377.00 KB
Download FDMC8360L Datasheet PDF
FDMC8360L page 2
Page 2
FDMC8360L page 3
Page 3

FDMC8360L Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A
  • Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free
  • 100% UIL Tested
  • RoHS pliant
  • DC-DC Conversion