FDMC86116LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- HBM ESD protection level > 3 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
- DC Conversion
- Part: FDMC86116LZ
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 284.23 KB
Other FDMC86116LZ Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDMC86116LZ | N-Channel Power MOSFET |
|
onsemi |
FDMC86116LZ-L701 | N-Channel Power MOSFET |