FDMQ8203 Datasheet | Fairchild Semiconductor

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET December 2011 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench® MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel - Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A - Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel - Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A - Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A - Substantial efficiency benefit in PD solutions - RoHS pliant This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Application...