FDMS0302S Key Features
- Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
- Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A
- Advanced Package and Silicon bination for Low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 Robust Package Design
| Part Number | Description |
|---|---|
| FDMS0300S | MOSFET |
| FDMS0306AS | N-Channel MOSFET |
| FDMS0308AS | MOSFET |
| FDMS0308CS | N-Channel MOSFET |
| FDMS0309AS | MOSFET |