FDMS3669S Key Features
- Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
- Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant
