FDMS3672 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A
* Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A
* Typ Qg = 31nC at VGS = 10V
* Low Miller Cha.

Application

Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.

Description

* Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A
* Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A
* Typ Qg = 31nC at VGS = 10V
* Low Miller Charge
* Optimized efficiency at high frequencies
* RoHS Compliant tm UItraFET devices combin.

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