FDMS7572S Key Features
- Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A
- Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A
- Advanced Package and Silicon bination for low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant