Datasheet Details
| Part number | FDMS7578 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 307.76 KB |
| Description | N-Channel MOSFET |
| Download | FDMS7578 Download (PDF) |
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Overview: FDMS7578 N-Channel Power Trench® MOSFET October 2014 FDMS7578 N-Channel Power Trench® MOSFET 25 V,60 A, 5.
| Part number | FDMS7578 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 307.76 KB |
| Description | N-Channel MOSFET |
| Download | FDMS7578 Download (PDF) |
|
|
|
Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 8 mΩ at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications Control MOSFET for Synchronous Buck Converters 100% UIL tested Notebook RoHS Compliant Server Telecomm High Efficiency DC-DC Switch Mode Power Supplies Top Bottom Pin 1 S S S G D5 D6 Power 56 D D DD D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note5) (Note 3) (Note 1a) Ratings 25 ±20 60 17 90 40 33 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 3.7 (Note 1a) 50 °C/W Device Marking FDMS7578 Device FDMS7578 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation 1 FDMS7578 Rev.C2 www.fairchildsemi.com FDMS7578 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Pa
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