FDMS7656AS Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A - Max r DS(on) = 1.9 mΩ at VGS = 7 V, ID = 27 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Sync FET Schottky Body Diode - MSL1 robust package design - 100% UIL tested - Ro HS pliant The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Top Bottom Pin 1 S D5 4G D6 3S D7 2S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID dv/dt EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C MOSFET dv/dt Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature...