FDMS86101DC Datasheet | Fairchild Semiconductor

Features - Dual Cool TM Top Side Cooling PQFN package - Max r DS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A - Max r DS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A - High performance technology for extremely low r DS(on) - 100% UIL Tested - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool TM package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications - Primary DC-DC MOSFET - Secondary Synchronous Rectifier - Load Switch Pin 1 S S S Bottom Pin 1 G Top Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 60 88 14.5 200 216 125 3.2 -55 to +150 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJC RθJA RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Top Source) (Bottom Drain) (Note 1a) (Note 1b) (Note 1i) (Note 1j) (Note 1k) 2.3 1.0 38 81 16 23 11 °C/W Package Marking and Ordering Information Device Marking 86101 Device FDMS86101DC Package Dual Cool TM Power 56 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units .fairchildsemi. ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev. C1 Free Datasheet http://../ FDMS86101DC N-Channel Dual...