FDMS86263P Key Features
- Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
- Very low Rds-on in Mid-Voltage P-Channel silicon technology
- This product is optimised for fast switching
| Manufacturer | Part Number | Description |
|---|---|---|
| FDMS86263P | P-Channel MOSFET |