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FDMS86263P Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.

This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

Applications „ Active Clamp Switch „ Load Switch Top Bottom Pin 1 SS D S S GS D SD D D D GD D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Con

Overview

FDMS86263P P-Channel PowerTrench® MOSFET FDMS86263P P-Channel PowerTrench® MOSFET -150 V, -22 A, 53.

Key Features

  • Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A.
  • Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A.
  • Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg.
  • This product is optimised for fast switching.

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ON Semiconductor Logo FDMS86263P P-Channel MOSFET ON Semiconductor

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