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FDMS86500L - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod

Features

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FDMS86500L N-Channel PowerTrench® MOSFET September 2011 FDMS86500L N-Channel PowerTrench® MOSFET 60 V, 80 A, 2.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. „ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.7 mΩ at VGS = 4.
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