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FDMS86500L - N-Channel MOSFET

General Description

This N

to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers.

Key Features

  • Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A.
  • Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86500L MOSFET, N‐Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Features • Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A • Max rDS(on) = 3.7 mW at VGS = 4.