Datasheet Summary
MOSFET, N‐Channel, POWERTRENCH)
60 V, 158 A, 2.5 mW
General Description This N- Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
- Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
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