FDMS86500L Datasheet
FDMS86500L Datasheet (onsemi)
onsemi
This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional s.
* Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A
* Advanced Package and Silicon combination for low rDS(on) and high
efficiency
* Next generation enhanced body diode technology, engineered for soft
recovery
* MSL1 robust package design
* 100% UIL teste.
FDMS86500L Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM co.
General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching.