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FDMS86500DC - N-Channel MOSFET

General Description

This N

POWERTRENCH® process.

to Ambie

Key Features

  • DUAL COOL® Top Side Cooling DFN8 Package.
  • Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 29 A.
  • Max rDS(on) = 3.3 mW at VGS = 8 V, ID = 24 A.
  • High Performance Technology for Extremely Low rDS(on).
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET POWERTRENCH), N-Channel, DUAL COOL) 56 60 V, 108 A, 2.3 mW FDMS86500DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • DUAL COOL® Top Side Cooling DFN8 Package • Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 29 A • Max rDS(on) = 3.