Datasheet Summary
FDMS86500L N-Channel PowerTrench® MOSFET
September 2011
N-Channel PowerTrench® MOSFET
60 V, 80 A, 2.5 mΩ Features
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
- Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced engineered for...
