Datasheet Details
| Part number | FDMS86500L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 316.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86500L_FairchildSemiconductor.pdf |
|
|
Overview: FDMS86500L N-Channel PowerTrench® MOSFET September 2011 FDMS86500L N-Channel PowerTrench® MOSFET 60 V, 80 A, 2.
| Part number | FDMS86500L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 316.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86500L_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A Advanced Package and Silicon bination for low rDS(on) and high efficiency Next generation enhanced engineered for soft recovery MSL1 robust package design 100% UIL tested RoHS pliant body diode technology, Applications Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch Top Bottom Pin 1 S S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) (Note 4) Ratings 60 ±20 80 158 25 180 240 104 2.5 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 °C/W Package Marking and Ordering Information Device Marking FDMS86500L Device FDMS86500L Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 1 .fairchildsemi.
Free Datasheet http://../ FDMS86500L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless othe
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMS86500L | N-Channel MOSFET | ON Semiconductor |
|
FDMS86500DC | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDMS86500DC | N-Channel MOSFET |
| FDMS86520 | N-Channel MOSFET |
| FDMS86520L | N-Channel MOSFET |
| FDMS86540 | N-Channel MOSFET |
| FDMS86550 | MOSFET |
| FDMS86550ET60 | MOSFET |
| FDMS86568_F085 | MOSFET |
| FDMS86101 | N-Channel MOSFET |
| FDMS86101A | N-Channel MOSFET |
| FDMS86101DC | N-Channel MOSFET |