Datasheet Summary
FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET
November 2012
N-Channel Dual CoolTM Power Trench® MOSFET
60 V, 108 A, 2.3 mΩ
Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A
- Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A
- High performance technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambi...
