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FDMS8670 Datasheet N-channel Power Trench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS8670 N-Channel Power Trench® MOSFET May 2009 FDMS8670 N-Channel Power Trench® MOSFET 30V, 42A, 2.

General Description

„ Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A „ Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A „ 100% UIL Tested „ RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance.

This part exhibits industry leading switching FOM (RDS*Qgd) to enhance DC-DC synchronous rectifier efficiency.

Application „ DC - DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 42 135 24 150 288 78 2.5 -55 to +150 Units V V A mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.6 50 °C/W Device Marking FDMS8670 Device FDMS8670 Package Power 56 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev.C1 1 .fairchildsemi.

Key Features

  • General.

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