FDMS8670AS Datasheet | Fairchild Semiconductor

FDMS8670AS N-Channel PowerTrench® SyncFETTM April 2008 N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mΩ tm Features General Description - Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A - Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A - Advanced Package and Silicon bination for low rDS(on) and high efficiency - SyncFET Schottky Body Diode - MSL1 robust package design - RoHS pliant The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic...