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FDMS8670AS - N-Channel MOSFET

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Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant The

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Part number FDMS8670AS
Manufacturer Fairchild Semiconductor
File Size 247.32 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS8670AS Datasheet
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FDMS8670AS N-Channel PowerTrench® SyncFETTM April 2008 FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mΩ tm Features General Description „ Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A „ Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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