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FDMS8672AS - N-Channel MOSFET

Datasheet Summary

Description

The FDMS8672AS has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

  • Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 18A.
  • Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 robust package design.
  • RoHS Compliant ® TM General.

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Datasheet Details

Part number FDMS8672AS
Manufacturer Fairchild Semiconductor
File Size 270.43 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS8672AS Datasheet
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FDMS8672AS N-Channel PowerTrench® SyncFETTM November 2007 FDMS8672AS N-Channel PowerTrench SyncFET 30V, 28A, 5.0mΩ Features „ Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 18A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant ® TM General Description tm The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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