FDMS8670 Description
at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance. This part exhibits industry leading switching FOM (RDS Qgd) to enhance DC-DC synchronous rectifier efficiency.
FDMS8670 Key Features
- Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A
- Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A
- 100% UIL Tested
- RoHS pliant
- DC Conversion
- 55 to +150
- 5.9 mV/°C