FDMS8670
FDMS8670 is manufactured by Fairchild Semiconductor.
FDMS8670 N-Channel Power Trench® MOSFET
May 2009
N-Channel Power Trench® MOSFET
30V, 42A, 2.6m: tm
Features
General Description
- Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A
- Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance. This part exhibits industry leading switching FOM (RDS- Qgd) to enhance
DC-DC synchronous rectifier efficiency.
Application
- DC
- DC Conversion
Top Bottom Pin 1
Power 56
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless...
