Datasheet Details
| Part number | FDMS8670 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 233.49 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMS8670 Download (PDF) |
|
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| Part number | FDMS8670 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 233.49 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMS8670 Download (PDF) |
|
|
|
Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance.
This part exhibits industry leading switching FOM (RDS*Qgd) to enhance DC-DC synchronous rectifier efficiency.
Application DC - DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 42 135 24 150 288 78 2.5 -55 to +150 Units V V A mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.6 50 °C/W Device Marking FDMS8670 Device FDMS8670 Package Power 56 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation FDMS8670 Rev.C1 1 www.fairchildsemi.com FDMS8670 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250PA, VGS = 0V ID = 250PA, referenced to 25°C VGS = 0V, VDS = 24V, VGS = ±20V, VDS = 0V Min Typ Max Units
FDMS8670 N-Channel Power Trench® MOSFET May 2009 FDMS8670 N-Channel Power Trench® MOSFET 30V, 42A, 2.
| Part Number | Description |
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