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FDMS8670 - N-Channel Power Trench MOSFET

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Description

Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored

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Datasheet Details

Part number FDMS8670
Manufacturer Fairchild Semiconductor
File Size 233.49 KB
Description N-Channel Power Trench MOSFET
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FDMS8670 N-Channel Power Trench® MOSFET May 2009 FDMS8670 N-Channel Power Trench® MOSFET 30V, 42A, 2.6m: tm Features General Description „ Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A „ Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance. This part exhibits industry leading switching FOM (RDS*Qgd) to enhance DC-DC synchronous rectifier efficiency.
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