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FDMS8674 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

„ Max rDS(on) = 5.0m: at VGS = 10V, ID = 17A „ Max rDS(on) = 8.0m: at VGS = 4.5V, ID = 14A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ RoHS Compliant The FDMS8674 has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Applications „ Computing VR & IMVP Vcore „ Secondary Side Synchronous Rectifier „ POL DC/DC Converter „ Oring FET/ Load Switch Top Bottom Pin 1 S S S G D5 D6 D D D D Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 21 94 17 150 181 78 2.5 -55 to +150 Units V V A mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.6 (Note 1a) 50 °C/W Device Marking FDMS8674 Device FDMS8674 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000units ©2009 Fairchild Semiconductor Corporation 1 FDMS8674 Rev.C2 www.fairchildsemi.com FDMS8674 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage

Overview

FDMS8674 N-Channel PowerTrench® MOSFET May 2009 FDMS8674 tm N-Channel PowerTrench® MOSFET 30V, 21A, 5.

Key Features

  • General.