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FDMS8670S - N-Channel MOSFET

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Description

Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design The FDMS8670S has been design

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Datasheet Details

Part number FDMS8670S
Manufacturer Fairchild Semiconductor
File Size 301.71 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS8670S Datasheet
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FDMS8670S N-Channel PowerTrench® SyncFETTM October 2014 FDMS8670S N-Channel PowerTrench® SyncFETTM tm 30V, 42A, 3.5m: Features General Description „ Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A „ Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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