FDMS8670S Overview
at VGS = 10V, ID = 20A Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A Advanced Package and Silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent...
FDMS8670S Key Features
- Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A
- Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A
- Advanced Package and Silicon bination for low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 robust package design
- RoHS pliant
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/ GPU low side switch
- Networking Point of Load low side switch
- Tele secondary side rectification