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FDMS9600S Datasheet Dual N-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

Q1: N-Channel „ Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A „ Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel „ Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A „ Max rDS(on) = 7.0m: at VGS = 4.5V, ID = 14A „ Low Qg high side MOSFET „ Low rDS(on) low side MOSFET „ Thermally efficient dual Power 56 package This device includes two specialized MOSFETs in a unique dual Power 56 package.

It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization.

The low switching loss "High Side" MOSFET is complemented by a Low Conduction Loss "Low Side" SyncFET.

Overview

FDMS9600S Dual N-Channel PowerTrench® MOSFET FDMS9600S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 32A, 8.5m: Q2: 30V, 30A, 5.

Key Features

  • General.