FDMT800100DC Datasheet - Fairchild Semiconductor

FDMT800100DC MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient the.

FDMT800100DC Features

* Max rDS(on) = 2.95 mΩ at VGS = 10 V, ID = 24 A

* Max rDS(on) = 4.46 mΩ at VGS = 6 V, ID = 19 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* Low

FDMT800100DC-FairchildSemiconductor.pdf