* Max rDS(on) = 2.95 mΩ at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.46 mΩ at VGS = 6 V, ID = 19 A
* Advanced Package and Silicon combination for low rDS(on) an.

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectificati.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching pe.

FDMT800120DC

FDMT800150DC

FDMT800152DC

FDMT80060DC

FDMT80080DC

FDM-2B

FDM100-0045SP

FDM21-05QC

FDM2452NZ

FDM3300NZ

FDM3622

FDM606P

FDM6296