FDN304PZ
FDN304PZ is P-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Features
- - 2.4 A,
- 20 V. RDS(ON) = 52 mΩ @ VGS =
- 4.5 V RDS(ON) = 70 mΩ @ VGS =
- 2.5 V RDS(ON) = 100 mΩ @ VGS =
- 1.8 V
Applications
- Battery management
- Load switch
- Battery protection
- Fast switching speed
- ESD protection diode
- High performance trench technology for extremely low RDS(ON)
- Super SOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Super SOT -3
TA=25o C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Maximum Power Dissipation
Parameter
Ratings
- 20 ±8
(Note 1a)
Units
V V A W °C
- 2.4
- 10 0.5 0.46
- 55 to +150
(Note 1a) (Note...
