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FDN304PZ - P-Channel MOSFET

Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Features

  • 2.4 A,.
  • 20 V. RDS(ON) = 52 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 70 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 100 mΩ @ VGS =.
  • 1.8 V.

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Full PDF Text Transcription

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FDN304PZ March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.
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