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FDP10N50F Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP10N50F / FDPF10N50FT N-Channel MOSFET FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Key Features

  • RDS(on) = 0.71Ω ( Typ. ) @ VGS = 10V, ID = 4.5A.
  • Low Gate Charge ( Typ. 18nC).
  • Low Crss ( Typ. 10pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant January 2009 UniFETTM.

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