FDP10N50F Key Features
- RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A
- Low Gate Charge ( Typ. 18nC)
- Low Crss ( Typ. 10pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
- Part: FDP10N50F
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 613.60 KB
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