FDP10N60NZ Key Features
- RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A
- Low Gate Charge (Typ. 23 nC)
- Low Crss (Typ. 10 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS pliant
FDP10N60NZ is N-Channel MOSFET manufactured by Fairchild Semiconductor.
| Part Number | Description |
|---|---|
| FDP10N60ZU | MOSFET |
| FDP10N50F | MOSFET |
| FDP100N10 | MOSFET |
| FDP10AN06A0 | N-Channel MOSFET |
| FDP120AN15A0 | N-Channel PowerTrench MOSFET |