* RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A
* Low gate charge ( Typ. 31nC)
* Low Crss ( Typ. 15pF)
* Fast switching
* 100% avalanche tested
* .

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switchi.

FDP10N60NZ

FDP10N50F

FDP100N10

FDP10AN06A0

FDP120AN15A0

FDP120N10

FDP12N35

FDP12N50

FDP12N50F

FDP12N50NZ

FDP12N60NZ

FDP13AN06A

FDP13AN06A0