FDP10N60ZU Key Features
- RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A
- Low gate charge ( Typ. 31nC)
- Low Crss ( Typ. 15pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Part: FDP10N60ZU
- Manufacturer: Fairchild (official site)
- Size: 482.59 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDP10N60NZ | N-Channel MOSFET |
| FDP10N50F | MOSFET |
| FDP100N10 | MOSFET |
| FDP10AN06A0 | N-Channel MOSFET |
| FDP120AN15A0 | N-Channel PowerTrench MOSFET |
FDP10N60ZU Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switching mode power supplies and...