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FDP10N60ZU - MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.65Ω ( Typ. )@ VGS = 10V, ID = 4.5A.
  • Low gate charge ( Typ. 31nC).
  • Low Crss ( Typ. 15pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.

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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω April 2009 UniFETTM tm Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) • Low Crss ( Typ. 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
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