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FDP15N65 - N-Channel MOSFET

Download the FDP15N65 datasheet PDF. This datasheet also covers the FDPF15N65 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V.
  • Low gate charge ( typical 48.5 nC).
  • Low Crss ( typical 23.6 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability April 2007 UniFET TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF15N65_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FDP15N40 N-Channel MOSFET
FDP15N50 N-Channel MOSFET
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Full PDF Text Transcription

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FDP15N65 / FDPF15N65 650V N-Channel MOSFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate charge ( typical 48.5 nC) • Low Crss ( typical 23.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability April 2007 UniFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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