FDP16N50 Key Features
- 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
- Low gate charge ( typical 32 nC)
- Low Crss ( typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FDP16N50
- Manufacturer: Fairchild (official site)
- Size: 1.00 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDP16AN08A0 | N-Channel MOSFET |
| FDP100N10 | MOSFET |
| FDP10AN06A0 | N-Channel MOSFET |
| FDP10N50F | MOSFET |
| FDP10N60NZ | N-Channel MOSFET |
FDP16N50 Description
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...