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FDP24N40 Key Features

  • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A
  • Low gate charge ( Typ. 46nC)
  • Low Crss ( Typ. 25pF)
  • Fast switching
  • 100% avalanche tested
  • Improve dv/dt capability
  • RoHS pliant
  • Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC)
  • Drain current limited by maximum junction temperature
  • 0.140 34

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FDP24N40 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switching mode power supplies and...