Datasheet Summary
FDP3205 N-Channel PowerTrench® MOSFET
May 2008
Features
N-Channel PowerTrench® MOSFET
55V, 100A, 7.5mΩ Description
- This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
- High performance trench technology for extermly low RDS(on)
- High power and current handing capability
- RoHS pliant
TO-220 FDP Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
.. Symbol VDSS
VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage...