FDP80N06 mosfet equivalent, n-channel mosfet.
* RDS(on) = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A
* Low Gate Charge (Typ. 57nC)
* Low Crss (Typ. 145pF)
* Fast Switching
* Improved dv/dt Capability <.
such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
TO-2.
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