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FDP8N50NZ - N-Channel MOSFET

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 770 m (Typ. ) @ VGS = 10 V, ID = 4 A.
  • Low Gate Charge (Typ. 14 nC).
  • Low Crss (Typ. 5 pF).
  • 100% Avalanche Tested.
  • Improve dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant N-Channel UniFETTM II MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET October 2013 FDP8N50NZ / FDPF8N50NZ 500 V, 8 A, 850 m Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant N-Channel UniFETTM II MOSFET Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.