Datasheet Summary
- N-Channel UniFETTM MOSFET
N-Channel UniFETTM MOSFET
300 V, 14 A, 290 mΩ
Features
- RDS(on) = 290 mΩ (Max.) @ VGS = 10 V, ID = 7 A
- Low Gate Charge (Typ. 18 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
Applications
- PDP TV
- Uninterruptible Power Supply
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction...