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FDPF44N25 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 18A, 250V, RDS(on) = 0.069Ω @VGS = 10 V.
  • Low gate charge ( typical 47 nC).
  • Low Crss ( typical 60 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM.

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www.DataSheet4U.com FDPF44N25 250V N-Channel MOSFET UniFET FDPF44N25 250V N-Channel MOSFET Features • 18A, 250V, RDS(on) = 0.069Ω @VGS = 10 V • Low gate charge ( typical 47 nC) • Low Crss ( typical 60 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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