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FDPF6N60ZUT - N-Channel MOSFET

Download the FDPF6N60ZUT datasheet PDF. This datasheet also covers the FDP6N60ZU variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 1.7 Ω (Typ. ) @ VGS = 10 V, ID = 2.25 A.
  • Low Gate Charge (Typ. 14.5 nC).
  • Low Crss (Typ. 5 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP6N60ZU_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPF680N10T N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDPF6N60ZUT — N-Channel UniFETTM II Ultra FRFETTM MOSFET FDPF6N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 4.5 A, 2 Ω November 2013 Features • RDS(on) = 1.7 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 14.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.