FDS3572
Features
- r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A
- Qg(tot) = 31n C (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Primary switch for Isolated DC/DC converters
- Distributed Power and Intermediate Bus Architectures
- High Voltage Synchronous Rectifier for DC Bus Converters
Formerly developmental type 82663
Branding Dash
4 3 2 1
6 7
1 2 3 4
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25o C, VGS = 10V, Rθ JA = 50o C/W) Continuous (TA = 100o C, VGS = 10V, Rθ JA = 50o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 8.9 5.6 Figure 4 515 2.5 20 -55 to 150 A A A m J W m W/o C o
Ratings 80 ±20
Units V V
Thermal Characteristics
RθJC RθJA RθJA...
